Self-biasing non-magnetic giant magnetoresistance
US5696655A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1996 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Jul 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A self-biasing, non-magnetic giant magnetoresistive sensor constructed from a thin film of inhomogeneous magnetoresistive material showing Giant Magnetresistance (GMR) at T=300.degree. K., e.g., Mercury Cadmium Telluride. In one embodiment, the sensor has a silicon substrate, a layer of inhomogeneous magnetoresistive material, e.g., Hg.sub.l-x Cd.sub.x Te, and electrodes attached to the non-homogeneous magnetoresistive layer. Alternatively, a buffer layer of, e.g., CdTe may overlay the substrate. In another embodiment, the sensor is an active element of a read/write head, particularly well suited for reading information signals stored in a magnetic medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.