Device having an electrically erasable non-volatile memory and process for producing such a device
US5696718A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 6, 1995 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Nov 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
Abstract
Device having an electrically erasable, non-volatile memory and its production process. In a storage area the device has at least one memory cell (12) of the floating grid type with a source (16) and a drain (18) separated by a channel region (14). According to the invention, the device also comprises means (44,38) for applying a memory cell erasing voltage to the channel region (14), independently of the memory cells of adjacent areas, as a result of a complete electrical isolation or insulation of each area. Application to the production of non-volatile memories which can be carried in satellites for replacing EPROM memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.