Reduced mode laser and method of fabrication
US5696784A · kind A · utility
14Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 1996 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Apr 19, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reduced, lateral mode laser diode is fabricated using a self-aligning process which produces a well controlled weakly index-guided waveguide with strong current confinement. The structure includes ion implants for controlling current injection into the active region from the top of the ridge. The number of modes may be reduced to unity, resulting in a single lateral mode laser. A laser diode array is fabricated in the same way.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.