Amorphous silicon carbide film and photovoltaic device using the same
US5700467A · kind A · utility
12Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1996 |
| Grant date | Dec 23, 1997 |
| Priority date | — |
| Expiry date | Mar 21, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In the present invention, the optical band gap Eg (eV) of an amorphous silicon carbide film has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the film: EQU Eg=a+bC.sub.H /100+cC.sub.C /100, where a, b, and c are respectively in the ranges of 1.54.ltoreq.a.ltoreq.1.60, 0.55.ltoreq.b.ltoreq.0.65, and -0.65.ltoreq.c.ltoreq.-0.55, whereby the defect density in the amorphous silicon carbide film can be significantly reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.