Method for manufacturing a capacitor for a semiconductor device
US5700709A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1995 |
| Grant date | Dec 23, 1997 |
| Priority date | — |
| Expiry date | Oct 25, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
Abstract
A method for manufacturing a capacitor for a semiconductor device, which includes the steps of forming a first conductive layer on a semiconductor substrate, forming a first pattern by patterning the first conductive layer, sequentially forming a second conductive layer and a first material layer on the entire surface of the resultant structure, forming a spacer on the sidewall of the second conductive layer by anisotropic-etching the first material layer, forming a second pattern by partially etching the second conductive layer and the first pattern, using the spacer as an etching mask, forming a third conductive layer on the entire surface of the resultant structure, forming a cylindrical storage electrode by anisotropic-etching the third conductive layer, and removing the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.