Lateral trench MISFET
US5701026A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1995 |
| Grant date | Dec 23, 1997 |
| Priority date | — |
| Expiry date | Oct 25, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/151
Abstract
To provide a lateral MISFET that has a uniform and reliable gate insulation film, and exhibits low on-resistance and excellent balance between the breakdown voltage and on-resistance. The device of the invention has an n-type semiconductor substrate, in a part of the surface layer thereof is formed a trench. An n-drain region is formed in the bottom of the trench. A side wall oxide film is formed on the side face of the trench. The trench is filled with a conductive material, on which is formed a drain electrode. A p-base region and an n-source region are self-aligned on the portion of the substrate in which the trench is not formed. A MIS gate is disposed on the p-base region. Since the portion of the substrate along the side wall oxide film functions as a drain drift region, the unit cell dimension are greatly reduced, the on-resistance is reduced, and therefore the trade-off relation between the breakdown voltage and the on-resistance is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.