Compound semiconductor device and fabrication method of producing the compound semiconductor device
US5701325A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1996 |
| Grant date | Dec 23, 1997 |
| Priority date | — |
| Expiry date | Oct 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved compound semiconductor device, such as a distributed Bragg reflection type or distributed feedback type laser device, having regions with and regions without a diffraction grating. The device is fabricated without exhibiting surface irregularities by growing a first epitaxial layer on a semiconductor substrate, forming a fine uneven structure on the surface of the first epitaxial layer and growing a second epitaxial layer on the fine uneven structure. The fine uneven structure has a surface shape which exposes crystal orientations that facilitate subsequent epitaxial growth. In one embodiment, portions of the fine uneven structure are formed as a diffraction grating while other portions are formed insufficiently uneven to have a diffraction effect for any usable light wavelength. The fine uneven structure may suitably be shallow, have a short pitch or be provided at a slant to the light propagation direction, in order to preclude a diffraction effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.