Ultrafine pattern forming method and ultrafine etching method using calixarene derivative as negative resist
US5702620A · kind A · utility
5Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Aug 13, 1996 |
| Grant date | Dec 30, 1997 |
| Priority date | — |
| Expiry date | Aug 13, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist film consisting of 5,11,17,23,29,35-hexachloromethyl-37, 38,39,40,41,42-hexamethoxycalix6!arene sensitive to a high-energy beam and soluble to a solvent is formed on a substrate etchable by a dry etching, has a selective region thereof exposed to the high-energy beam, with a remaining region unexposed thereto, and developed to define a pattern on the substrate, as the remaining region is removed by the solvent, before the substrate with the pattern is subjected to the dry etching. A nanometric patterning and etching is permitted, with a reduced process time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.