Surface emission laser and method of manufacturing the same
US5703898A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 8, 1995 |
| Grant date | Dec 30, 1997 |
| Priority date | — |
| Expiry date | Dec 8, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emission laser is formed by sequentially stacking an n-type semiconductor multilayer reflector, an n-type clad layer, an active layer, a p-type clad layer, and a p-type semiconductor multilayer reflector on a semiconductor substrate. The p-type semiconductor multilayer reflector is etched to form a mesa. An electrode is formed on at least on the mesa side surfaces and a portion of the mesa bottom surface. The thickness of a GaAs film as the mesa bottom surface of the p-type semiconductor multilayer reflector to which an etching process is stopped is set to be (1/4+n/2, where n is an integer) times the oscillation wavelength. A method of manufacturing the surface emission laser is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.