Method of producing a semi-conductor with a highly doped zone situated between lightly doped zones, for the manufacture of transistors
US5705410A · kind A · utility
17Cited by
5References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 12, 1996 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Jun 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a transistor with a highly doped zone situated between lightly doped zones. This method comprises: a first oblique implant of ions (100) into a first and a second zone (144, 142), a mask (114) being formed at the periphery of a third zone in order to protect the third zone from the ions of the first implant, a second oblique implant of ions (130) into the first and third zones, a mask (115) being formed at the periphery of the second zone (142) in order to protect the second zone (142) from the ions (130) of the second implant, then the formation of a gate of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.