Method of manufacturing an electronic device using thermally stable mask
US5705413A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1996 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Oct 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
Thin-film circuit elements (M1,M2,M3,R) of a large-area electronic device such as an image sensor or flat panel display are formed with different crystallinity portions (1a,1b) of a semiconductor film (1). Highly crystalline portions (1a) are formed by exposure to an energy beam (25), for example from an excimer laser, while amorphous or low-crystalline portions (1b) are masked by a masking pattern of thermally-stable absorbent or reflective inorganic material (21) on an insulating barrier layer (20). The barrier layer (20) of, for example, silicon oxide has a sufficient thickness (t.sub.b) to mask the amorphous or low-crystallinity film portions (1b) from heating effects in the inorganic material, such as for example heat diffusion and/or impurity diffusion from the inorganic material (21). This type of masking pattern (20,21) in accordance with the invention is stable and versatile, permitting fabrication of interposed small-area components of different crystallinity in a thin-film circuit and capable of use for masking further processing treatments in earlier and/or later stages in the manufacture, for example an ion implantation (35).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.