LC element comprising a reverse biased pn junction
US5705963A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1994 |
| Grant date | Jan 6, 1998 |
| Priority date | — |
| Expiry date | Dec 19, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2001/0078
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An LC element for use with a semiconductor device features excellent attenuation characteristics. The element includes a pn junction that has a predetermined shape and which is formed near the surface of a semiconductor substrate. The predetermined shapes include a spiral shape, a meander shape, a straight shape, and a curved shape. An inductor electrode is formed on the pn junction, and the pn junction is reverse biased with a specified voltage to form a distributed capacitor having a desired capacitance. One of the p and n layers functions as an inductor. The element is easily manufactured and requires minimal assembly, and may also be integrally formed as part of an IC or LSI device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.