Device for producing SiC single crystals
US5707446A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Jan 13, 1998 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
SiC single crystals are produced in a reaction chamber, in which there is a seed crystal for the separation of a SiC single crystal from the gas phase. The reaction chamber is connected to a storage chamber, which is at least partly filled with a supply of SiC, by a gas channel with a predetermined cross-section for conveying the SiC in the gas phase. The supply of SiC is sublimated in a heating device and a temperature gradient is adjusted in the reaction chamber. It is, thus, possible to produce SiC single crystals with any desired cross-sectional area and of high crystalline quality and single-crystal yield, because the conveyance rate of the gas molecules can be precisely adjusted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.