Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates
US5707744A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1995 |
| Grant date | Jan 13, 1998 |
| Priority date | — |
| Expiry date | Dec 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new polycrystalline silicon film which has been crystallized using a polycrystalline silicon-germanium (poly-Si.sub.1-x Ge.sub.x) capping film to "seed" crystallization of an amorphous silicon film on an upper surface of a substrate. The polycrystalline silicon film has no nucleation sites and a greater number of grain boundaries in the region near the polycrystalline silicon upper surface than in the region near the polycrystalline silicon and substrate upper surface interface. This indicates that crystallization and crystal growth occurred from the polycrystalline silicon upper surface and proceeded in a direction towards the substrate upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.