Method of shifting a wavelength in a semiconductor structure having quantum wells
US5707890A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1995 |
| Grant date | Jan 13, 1998 |
| Priority date | — |
| Expiry date | Mar 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3413
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
From a top face of a semiconductor structure of the III-V type, inter-diffusion of elements between the wells and the barriers of an internal quantum structure is hot induced. The inter-diffusion is performed in one segment of the structure only, namely a segment in which the characteristic wavelength is to be shifted so as to constitute an amplitude modulator, another segment of the structure including a Bragg grating so as to constitute a laser emitter. In accordance with the invention, the inter-diffusion is induced by a layer of indium maintained in contact with the top face by means of a dielectric encapsulation layer. The invention is applicable in particular to optical telecommunications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.