Thermoelectric semiconductor material
US5708233A · kind A · utility
11Cited by
10References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1996 |
| Grant date | Jan 13, 1998 |
| Priority date | — |
| Expiry date | Jul 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/855
Abstract
A thermoelectric semiconductor material is used for thermoelectric conversion in a thermoelectric conversion device. The material comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, the double oxide comprising a composition that is represented by MIn.sub.2 O.sub.4, wherein M represents a metal element that can be changed into a divalent ion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.