Electrode material and electrode for III-V group compound semiconductor
US5708301A · kind A · utility
13Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1995 |
| Grant date | Jan 13, 1998 |
| Priority date | — |
| Expiry date | Feb 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of In.sub.x Ga.sub.y Al.sub.z N, where x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.