Quantum effect device
US5710436A · kind A · utility
102Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1995 |
| Grant date | Jan 20, 1998 |
| Priority date | — |
| Expiry date | Sep 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/814
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum effect device includes a first layer having a plurality of charge confinement regions, a second layer opposing the first layer and separated from the first layer, the second layer having charges at a high concentration and consisting of a metal layer or a semiconductor layer, and a third layer consisting of an insulating layer or a semiconductor layer having a large band gap between the first layer and the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.