Semiconductor device and method of manufacturing same
US5710442A · kind A · utility
32Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1996 |
| Grant date | Jan 20, 1998 |
| Priority date | — |
| Expiry date | Jan 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A semiconductor device sets an impurity density of a p base layer in a bevel end-face region to a density lower than that in an operating region and has a parasitic channel preventive region provided between the bevel end-face region and the operating region. Since the blocking-voltage and the current-carrying capacity can be adjusted independently from each other, the blocking voltage and the current-carrying capacity can be both improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.