Graded-channel semiconductor device

US5712501A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Robert B. Davies · Tempe, US
• Frank K. Baker, Jr. · Austin, US
• Jon J. Candelaria · Tempe, US
• Andreas Wild · Weimar, DE
• Peter J. Zdebel · Mesa, US

Key dates

• Filing date: Oct 10, 1995
• Grant date: Jan 27, 1998
• Expiry date: Oct 10, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0217

Abstract

A graded-channel semiconductor device (10) includes a substrate region (11) having a major surface (12). A source region (13) and a drain region (14) are formed in the substrate region (11) and are spaced apart to form a channel region (16). A doped region (18) is formed in the channel region (16) and is spaced apart from the source region (13), the drain region (14), and the major surface (12). The doped region (18) has the same conductivity type as the channel region (16), but has a higher dopant concentration. The device (10) exhibits an enhanced punch-through resistance and improved performance compared to prior art short channel structures.