Semiconductor component having an edge termination means with high field blocking capability

US5712502A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Heinz Mitlehner · Uttenreuth, DE
• Dietrich Stephani · Bubenreuth, DE
• Ulrich Weinert · Herzogenaurach, DE

Key dates

• Filing date: Mar 27, 1996
• Grant date: Jan 27, 1998
• Expiry date: Mar 27, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/86

Abstract

An n- or p-doped semiconductor region accommodates the depletion zone of an active area of the semiconductor component with a vertical extension dependent upon an applied blocking voltage. The junction termination for the active area is constituted with a semiconductor doped oppositely to the semiconductor region, and is arranged immediately adjacently around the active area on or in a surface of the semiconductor region. The lateral extension of the junction termination is greater than the maximum vertical extension of the depletion zone, and the semiconductor region as well as the junction termination are constituted with a semiconductor with a band gap of at least 2 eV.