Pin type light-receiving device, opto electronic conversion circuit, and opto-electronic conversion module
US5712504A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1996 |
| Grant date | Jan 27, 1998 |
| Priority date | — |
| Expiry date | Feb 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
Abstract
A pin type light-receiving device according to the present invention comprises (a) a semiconductor substrate, (b) a first semiconductor layer formed on a semiconductor substrate and doped with an impurity of a first conduction type, (c) a second semiconductor layer formed in a mesa shape on the first semiconductor layer and made of a first semiconductor material without intentionally doping the first semiconductor material with an impurity, (d) a third semiconductor layer formed in a mesa shape on the second semiconductor layer and made of the first semiconductor material doped with an impurity of a second conduction type different from the first conduction type, (e) a first electrode layer formed in ohmic contact on the first semiconductor layer, (f) a second electrode layer formed in ohmic contact on the third semiconductor layer, and (g) a fourth semiconductor layer formed around the first to the third semiconductor layers and made of a second semiconductor material having a band gap energy greater than the first semiconductor material without intentionally doping the second semiconductor material with an impurity. This arrangement can suppress the dark current, based on a reduc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.