Diode-connected semiconductor device and method of manufacture

US5714393A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Andreas Wild · Weimar, DE
• Robert B. Davies · Tempe, US

Key dates

• Filing date: Dec 9, 1996
• Grant date: Feb 3, 1998
• Expiry date: Dec 9, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A compact diode-connected semiconductor device (20) and a method of manufacturing the field effect transistor (10). A doped layer (44) is formed in a semiconductor substrate (41) which serves as a drain extension region. An oxide layer (46) is formed on the semiconductor substrate (41) and an opening (50) is formed in the oxide layer (46). A gate structure (81) having an active gate portion (78) and a gate shorting structure (22) are formed on the oxide layer (46). The gate shorting structure (22) and the portion of the semiconductor substrate (41) adjacent the active gate portion (78) are doped with an impurity material of the same conductivity type as the doped layer (44). The gate shorting structure (22) serves as a source of impurity material for the drain region.