Process for the manufacture of thin films of semiconductor material
US5714395A · kind A · utility
426Cited by
9References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 12, 1996 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Sep 12, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process includes the following steps: implantation of ions (12) in a semi-conducting wafer (10), to create a cleavage layer of gaseous microblisters (16) in the wafer, heat treatment of the wafer, in order to cause separation of a surface layer (18) from the rest of the wafer, along the layer of microblisters. According to the invention, the implantation is carried out at a depth equal to or greater than a given minimum depth so that the thin film obtained is rigid, and so that the heat treatment can release it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.