Semiconductor device with an indium-tin-oxide in contact with a semiconductor or metal
US5714790A · kind A · utility
21Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 17, 1996 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Apr 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/247
Abstract
A semiconductor device has an ITO film which is in contact with a semiconductor or a metal, the ITO film having an insulating film with SiN as the main constituent provided on or under at least a portion of the ITO film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.