Semiconductor contact structure in integrated semiconductor devices
US5714804A · kind A · utility
26Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1996 |
| Grant date | Feb 3, 1998 |
| Priority date | — |
| Expiry date | Nov 14, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrical connection structure is provided for protecting a barrier metal layer within a contact opening during the formation of an aluminum interconnection layer overlying a tungsten plugged connection structure. The deposited tungsten plug overlying the barrier metal layer is etched back sufficiently to create a slight recess at the opening. A thin layer of tungsten is then selectively deposited for filling the recess. This layer acts as an etch stop during aluminum interconnection layer formation and protects the underlying barrier metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.