Growing method of gallium nitride related compound semiconductor crystal and gallium nitride related compound semiconductor device
US5716450A · kind A · utility
9Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Dec 6, 1995 |
| Grant date | Feb 10, 1998 |
| Priority date | — |
| Expiry date | Dec 6, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of growing a gallium nitride related compound semiconductor crystal on a single crystal substrate, the {011} plane or the {101} plane of rare earth group 13 (3B) perovskite is used as the single crystal substrate. As a result, a gallium nitride group semiconductor crystal excellent in crystallinity can be grown epitaxially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.