Method of manufacturing a non-volatile semiconductor memory device with peripheral transistor
US5716864A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 22, 1996 |
| Grant date | Feb 10, 1998 |
| Priority date | — |
| Expiry date | Jan 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/43
Abstract
A first insulating film for the formation of a gate insulating film is formed on a semiconductor substrate having a memory cell forming region and a peripheral transistor forming region. A first conductive film for the formation of a floating gate is formed on the first insulating film, and a second insulating film is formed on the first conductive film. A second conductive film is formed on the second insulating film for protecting the second insulating film, and a protective film performing the functions of an oxidation-resistant film, a washing-resistant film and an etching resistant film is formed on the second conductive film. Then, the peripheral transistor region is subjected to a predetermined process. A third conductive film, which will become a control gate of the memory cell and a gate of the peripheral transistor, is formed on the second conductive film and the peripheral transistor forming region subjected to the predetermined process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.