Semiconductor device having capacitior and manufacturing method thereof
US5717233A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1997 |
| Grant date | Feb 10, 1998 |
| Priority date | — |
| Expiry date | Jan 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
Abstract
A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.