Plasma processing apparatus
US5718769A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1995 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Mar 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing method and apparatus for carrying out plasma processing by supplying a high-frequency power of 20 MHz to 450 MHz to cause discharge to take place between a first electrode serving also as a film forming substrate and a second electrode provided so as to surround the first electrode, the high-frequency power is supplied from its power source to the second electrode at two points at least. In plasma processing apparatuses as typified by plasma CVD apparatuses to which the high-frequency power of a frequency from 20 MHz to 450 MHz is supplied, this method and apparatus can effectively decrease unevenness is plasma processing in the peripheral direction of the film formed, can promise a high plasma processing rate and can improve the characteristics of a deposited film during deposited film formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.