Chromium target and process for producing the same
US5718778A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1996 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Mar 29, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chromium target is disclosed for use in the formation of chromium films or sheets of reduced thickness by means of sputtering. The target has a recrystallized structure represented by the equation, A/B.ltoreq.0.6, where A is the diffraction intensity of the (110) planes as determined by X-ray diffraction of a sputtered surface, and B is the diffraction intensity as determined from the sum of the (110), (200) and (211) planes. The target preferably has a deflective strength of above 500 MPa and an average crystal grain of below 50 .mu.m. The chromium target is produced by subjecting a starting chromium material to at least one stage of plastic working at a temperature of not higher than 1,000.degree. C., and subsequently by heat-treating the resulting chromium material for recrystallization at a temperature of higher than the recrystallization temperature of the chromium material but not higher than 1,200.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.