Photoelectric conversion semiconductor device with insulation film
US5719414A · kind A · utility
14Cited by
10References
6Claims
0Family size
Inventors
Key dates
| Filing date | Mar 16, 1994 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Mar 16, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second conductivity type impurity region having a depth of 0.1 .mu.m or less and a peak density of 1.times.10.sup.19 atoms/cm.sup.3 or more. A method of manufacturing a photoelectric conversion semiconductor device is characterized by a step of ion-injecting boron or boron fluoride with a dose amount of 1.times.10.sup.16 to 5.times.10.sup.16 atoms/cm.sup.2 into a semiconductor substrate as an impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.