Passivated vertical cavity surface emitting laser
US5719893A · kind A · utility
37Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1996 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Jul 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A passivated vertical cavity surface emitting laser including a first stack of distributed Bragg reflectors disposed on the surface of a semiconductor substrate, a first cladding region disposed on the first stack, an active region disposed on the first cladding region, a second cladding region disposed on the active region, and a second stack of distributed Bragg reflectors disposed on the second cladding region. A passivation layer having an optical thickness of an integral multiple of approximately one half of the wavelength of emitted light is disposed on the vertical cavity surface emitting laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.