Method of depositing titanium-containing conductive thin film
US5721021A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1996 |
| Grant date | Feb 24, 1998 |
| Priority date | — |
| Expiry date | Oct 3, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing a titanium-containing conductive thin film, which is capable of depositing a high-quality thin film having a low chlorine content by grounding, through a capacitor, a terminal of a plasma generating electrode disposed in a processing chamber. In the method, one of the introduction terminals of the plasma generating electrode is connected to a radio-frequency power source, the other terminal being grounded through the capacitor. Titanium tetrachloride, hydrogen gas, and nitrogen gas are introduced into the processing chamber at flowrates of 20 ml/min, 30 ml/min and 10 ml/min, respectively. The pressure in the processing chamber is set to about 1 Pa, and the temperature of the substrate is set to 450.degree. to 600.degree. C. A low-pressure, high-density plasma is generated with an output of the radio-frequency power source of 2.5 kW to deposit a titanium nitride film at a rate of about 30 nm/min. The resultant titanium nitride film has a chlorine content of 1% or less, metallic lustre and low resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.