Charge pump having reduced threshold voltage losses
US5721509A · kind A · utility
10Cited by
6References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1996 |
| Grant date | Feb 24, 1998 |
| Priority date | — |
| Expiry date | Feb 5, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/146
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A charge pump (40) is implemented with several stages (30), including a control stage (50), in a manner integral with a ring-oscillator loop. The charge pump (40) is more efficient for producing voltage VBB to supply to a substrate well implementing circuitry such as a DRAM or SRAM (61), since there are no threshold voltage drops across any of the critical path transistors (M3) within the charge pump (40). This is accomplished by providing a boosted signal level from the proceeding stage (30). In the design, parasitic diode leakage is negligible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.