Semiconductor integrated circuit having a substrate back bias voltage generating circuit which is responsive to a power supply detection circuit
US5721510A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 15, 1996 |
| Grant date | Feb 24, 1998 |
| Priority date | — |
| Expiry date | Mar 15, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/205
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
In a semiconductor integrated circuit including a substrate back bias voltage generating circuit composed of a substrate back bias voltage generating circuit, and a power supply voltage detecting circuit for comparing a reference voltage with a power supply voltage and for generating a power supply voltage detecting signal which is brought to the first level when the power supply voltage is higher than the reference voltage, and to a second level when the power supply voltage is not higher than the reference voltage. A substrate leak control circuit generates a leak control pulse when the power supply voltage detecting signal changes from the first level to the second level. A substrate leak circuit responds to the leak control pulse so as to connect the substrate to a predetermined potential through a resistive means having a predetermined resistance value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.