Method of processing an epitaxial wafer of InP or the like
US5723360A · kind A · utility
12Cited by
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11Claims
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Inventor
Key dates
| Filing date | Feb 20, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Feb 20, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Fine processing of InP epitaxial wafers including As, In and P for producing laser diodes, light emitting diodes or photodiodes. The InP epitaxial wafer is selectively covered with striped protection mask films. The wafer is etched by some etchant which forms normal-mesas or mountain-shaped stripes under the masks. Then the wafer is again etched by a gas of thermally dissolved AsCl.sub.3 till the stripes have rectangle sections with erect surfaces. Buried layers of InP are grown on the eliminated parts of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.