Dry etching method, method of fabricating semiconductor device, and method of fabricating liquid crystal display device
US5723366A · kind A · utility
37Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1995 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Sep 28, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13439
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A dry etching method includes the steps of etching a transparent electrode film by reactive ion etching with a first etching gas, changing the first etching gas to a second etching gas, and etching the transparent electrode film by reactive ion etching with the second etching gas. A chlorine containing gas is employed as the second etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.