Method for yield and performance improvement of large area radiation detectors and detectors fabricated in accordance with the method
US5723866A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Jun 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1843
Abstract
A large area radiation detector (1) includes a volume of semiconductor material (24) that is responsive to ionizing radiation for generating charge carriers, a first electrode (26) coupled to one surface of the volume of semiconductor material, and a plurality of second electrodes (20, 22) coupled to a second surface of the volume of semiconductor material. Individual ones of the second electrodes are associated with an underlying region of the volume of semiconductor material for collecting charge carriers from the underlying region. The detector further includes circuitry (30, 31, 32) coupled to the plurality of second electrodes for summing charge carriers collected by the plurality of second electrodes to produce an output signal, and a mechanism for selectively decoupling individual ones of the second electrodes from the circuitry. In one embodiment the circuitry includes electrically conductive traces (16) that couple individual ones of the second electrodes to a summing junction (31), and the mechanism for selectively decoupling includes physically opening a trace to disconnect the second electrode from the summing junction. In a further embodiment the mechanism for selectiv…
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