Semiconductor device and associated fabrication method
US5723909A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Sep 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.