Voltage bias and temperature compensation circuit for radio frequency power amplifier
US5724004A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Jun 13, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/1935
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A communication device (104) includes a radio frequency power amplifier (202) and a bias circuit (204). The power amplifier (202) includes a depletion mode MESFET (214) for RF power amplification. To properly bias the MESFET (214) in a circuit including logic components powered by a conventional battery (136), the bias circuit (204) includes a level shifter (223) to provide the necessary gate-to-source voltage for the MESFET (214). To maintain the RF output power from the communication device (104) constant over temperature, the bias circuit (204) output voltage varies over temperature to track the temperature variation of the MESFET (214).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.