Semiconductor memory device with reduced chip area
US5724291A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Nov 21, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1078
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory has memory cells arranged in a matrix to form a memory cell block. A word line is connected to each row of memory cells. The cell block has a pair of data lines, a row decoder circuit for activating one of the word lines and the pair of data lines, and a column decoder circuit for generating read and write select signals to selectively activate a desired column of memory cells and set that column to either a read or write mode. Each memory cell column has a pair of digit lines, a sense amplifier for amplifying differential data signals on the digit lines and read and write data transfer circuits for transferring differential read and write data signals to the digit lines in the read and write modes. The read data transfer circuit includes a pair of first MOS transistors connected to the data lines and activated with the read select signal, and a pair of second MOS transistors connected to the first MOS transistors in series. The gates of the second MOS transistors are connected to the digit lines. The second MOS transistors are operable to drive the data lines via the first MOS transistors by the differential read data signals in the read mode. The write data…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.