Diode-pumped laser system using uranium-doped Q-switch
US5724372A · kind A · utility
4Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Jan 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/175
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser system includes a laser resonator cavity having a resonant path and an Er,Yb:glass lasing element with an output of from about 1.5 to about 1.6 micrometers within the laser resonator cavity. A diode array optically pumps the lasing element to emit light. A Q-switch lies along the resonant path within the laser resonator cavity. The Q-switch is formed of a host material having a concentration of uranium ions therein, so as to be a saturable absorber of the light emitted by the lasing element. The Q-switch is preferably a uranium-doped fluoride such as U:CaF.sub.2, U:SrF.sub.2, or U:BaF.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.