Integrated power semiconductor component having a substrate with a protective structure in the substrate

US5726478A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Josef-Matthias Gantioler · Munich, DE
• Ludwig Leipold · Munich, DE
• Rainald Sander · Oberhaching, DE
• Jens-Peer Stengl · Hersbruck, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Dec 19, 1996
• Grant date: Mar 10, 1998
• Expiry date: Dec 19, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.