Semiconductor hybrid component
US5726500A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1995 |
| Grant date | Mar 10, 1998 |
| Priority date | — |
| Expiry date | Dec 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
Abstract
Semiconductor hybrid components, especially linear infrared detectors produced by hybridization. A main substrate has integrated thereon active elements which cannot be produced on a silicon substrate. The substrate is made, for example, of AsGa, InP, HgCdTe or PbTe. Several silicon chips are mounted on the main substrate, by hybridization using indium balls. These chips include the read and multiplexing circuits. The silicon chips remain of limited size (a few millimeters) so that the differential thermal expansion stresses are limited, but the detection array may be produced as one piece without butt-joining. It is therefore possible to produce arrays of great length (several centimeters) and of high resolution (at least a thousand points).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.