Process for manufacturing a field-emission device
US5727977A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1996 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Mar 4, 2016 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y30/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for manufacturing of a field emission device (100, 200) including the steps of i) providing a substrate (101, 201), ii) forming a conductive row (106, 206), ii) forming a dielectric layer (102, 202), iv) forming a resist layer (116, 216), v) forming a self-assembled monolayer (112, 212) of a self-assembled monolayer-forming molecular species on the resist layer (116, 216) so that the self-assembled monolayer (112, 212) defines an etch pattern for an emitter well (107, 207), vi) etching the resist layer (116, 216), vii) etching the dielectric layer ((102, 202), viii) forming conductive column (103, 203), and ix) forming the electron-emitter structure (105, 208) within the emitter well (107, 207).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.