X-ray image sensor
US5729021A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1996 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Sep 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
An x-ray image sensor (1) with a lead-oxide photoconductor layer (6) positioned between collecting electrodes (3) and a common electrode (2) is provided with a passivation layer (7) which separates the lead-oxide from the metal of the common electrode to counteract degradation of the photoconductor layer due to chemical reactions between then metal of the common electrode and the lead-oxide. A bias layer (8) is provided between the common electrode (2) and the photoconductor layer (6) and a cladding layer (9) is provided between collecting electrodes (3) and the photoconductor layer (6) so as to avoid injection of charges into the photoconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.