Programming flash memory using predictive learning methods
US5729489A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1995 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Dec 14, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5625
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a memory cell having more than two possible states to a desired state. The method includes applying a programming pulse to the memory cell. The change in the amount of charge stored by the memory cell caused by applying the programming pulse to the memory cell is sensed. The control engine determines characterization information indicative of programming characteristics of the memory cell in response to the detected change in the amount of charge stored by the memory cell. The control engine then uses the characterization information to directly program the memory cell to approximately the desired state without performing a program verify operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.