Electrophotographic apparatus having an a-Si photosensitive drum assembled therein
US5729800A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1994 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Oct 27, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/102
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic apparatus using an a-Si photosensitive drum. The a-Si photosensitive drum has a thickness between 2 and 25 .mu.m. The initial charging potential on the photosensitive drum is set to 450V or below. The center exposure wavelength of an exposure means is set to 700 nm or above. The photosensitive drum includes a photoconductive layer formed as a thin film a-Si layer having a temperature characteristic of 1.0 V/.degree.C. or below. For realizing low charging potential and low electric field development, the thickness d of the photoconductive layer in the photosensitive drum is set to 2 to 24 .mu.m, the relative dielectric constant .epsilon.r is set to 2 or above, and the ratio d/.epsilon.r is set to 9 or below. The photosensitive drum is formed on a conductive support and has a three-layer structure, including a carrier charge blocking layer for blocking the introduction of carrier charge (of the opposite polarity to that of charging) from the conductive support into the photoconductive layer, a photoconductive layer and an insulating or high resistivity layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.