Masking methods during semiconductor device fabrication
US5730798A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 1995 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Aug 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of masking semiconductor substrates during fabrication of semiconductor devices includes positioning an oxide mask on the substrate so as to define a growth area and an unmasked portion the surface. A dense oxide layer is grown on the unmasked portion and the oxide mask is removed to expose the growth area. The substrate is introduced into a growth chamber and heated to approximately 580.degree.-600.degree. C. to desorb any native oxide in the exposed growth area. Crystalline material is selectively grown on the exposed growth area and the substrate is heated to approximately 640.degree. C. under high arsenic flux to desorb the dense oxide layer, without removing the substrate from the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.